My other interests include the design and development of a variety of novel device structures such as high-power spatially coherent semiconductor lasers, vertical cavity surface emitters, quantum dot lasers, and mid-IR Quantum Cascade Lasers. I have been involved in diode laser development using an aluminum-free material system, InGaAsP/InGaP/GaAs. The Al-free material system offers many advantages for diode lasers including ease of fabrication for complex index-guided device structures and improved reliability. However, realizing the full potential of this material system requires an understanding of the nature of quantum-well growth for Al-free materials, and the influence on device performance. Diode lasers of this type are very desirable for many applications such as high-speed, high resolution printing, telecommunications, and medical therapy. My research interests focus on material growth and fabrication issues for III/V compound semiconductor devices. Improvements in device performance can be directly linked to advances in material growth and process development. I am particularly interested in the development of semiconductor diode lasers using the metalorganic chemical vapor deposition (MOCVD) growth process.The MOCVD process allows for the controlled growth of ultra-thin semiconductor films with abrupt interfaces, permitting the fabrication of high performance quantum-well lasers and other optoelectronic devices. Understanding the influence of the material properties on device characteristics can lead to significant improvements in performance.