Susan Babcock

Professor

Room: 215
Materials Science and Engineering
1509 University Avenue
Madison, WI 53706

Ph: (608) 263-5696
Fax: (608) 262-8353
babcock@engr.wisc.edu

Primary Affiliation:
Materials Science and Engineering

Additional Affiliations:
Materials Science Program,


Profile Summary

The theme of my research is microstructural evolution in thin film electronic materials. We focus our work on interfaces and defect structures in engineered substrates, engineered buffer layers and epitaxial compound semiconductor materials for the substrate-overlayer lattice mismatch is large.  Our research involves detailed characterization of defect microstructures and compositional homogeneity with the goal of understanding the mechanisms by which improved substrates lead to improved film quality. Our research group uses very high spatial resolution techniques for composition and structure determinations with a focus on techniques of high resolution imaging and analystical transmission and scanning transmission electron microscopy and, more recently, atom probe tomography.

Education

  • SB (Materials Science and Engineering) 1982, Massachusetts Institute of Technology
  • PhD (Materials Science) 1987, Massachusetts Institute of Technology

Research Interests

  • crystal defect microstructures
  • microstructure in films and engineered substrates of/for compound semiconductors
  • applications of electron microscopy and atom probe tomography in materials research

 

Publications

“Increased bismuth concentration in MBE GaAs1-xBix films by oscillating III/V flux ratio during growth,” A. W. Wood; J. Li; A. S. Brown; S. E. Babcock, submitted 2014

Unexpected Bismuth Concentration Profiles in MOVPE-Grown GaAs1-xBix/GaAs Superlattices Revealed by Z-Contrast STEM Imaging,” A. W. Wood; Y. Guan; K. Forghani;  A. Anand; T. F. Kuech; S. E. Babcock, submitted, 2014.

“Design and characterization of thick InxGa1-xAs metamorphic buffer layers grown by hydride vapor phase epitaxy, K.L. Schulte, B.T. Zutter, A.W. Wood, S.E. Babcock adn T.F. Kuech, Semiconductor Science and Technology 29 (2014)

 “Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1-yBiy,\" Kamran Forghani, Yingxin Guan, Adam W. WOod, Amita Anand, Susan E. Babcock, Luke J. Mawst, Thomas F. Kuech, Journal of Crystal Growth 395 (2014) 38-45.

 “GaAs1−y−zPyBiz, an alternative reduced band gap alloy system lattice-matched to GaAs,” KamranForghani, Yingxin Guan, Maria Losurdo, Guangfu Luo, Dane Morgan, Susan E Babcock, April S. Brown, Luke J. Mawst, T.F. Kuech,  Appl. Phys. Lett. 105 (2014) 111101.

“Heteroepitaxy of GaAs on (001) Ge substrates at high growth rates by hydride vapor phase epitaxy,\" K.L. Schulte, A.W. Wood, R.C. Reedy, A.J. Ptak, N.T. Meyer, S. E. Babcock and T.F. Kuech, Journal of Applied Physics 113 (2013)

\"Creep rupture behavior of semi-solid cast 7075-T6 Al alloy,\" N.Mahathaninwong, Y. Zhou, S.E. Babcock, T. Plookphol, J Wannasin and S. Wisutmethangoon, Materials Science and Engineering A, 556 (2012) 107-113.

“Growth Behavior and Defect Reduction in Heteroepitaxial InAs and GaSb Using Block Copolymer Lithography,” Smita Jha, Monika K. Wiedmann, T. S. Kuan, Xueyan Song, S. E. Babcock, and T. F. Kuech, J. Crystal Growth, 315 (2011) 91-95.

“Metamorphic and Non-conventional `Buffer\' Layers,”T.F. Kuech, S. Jha, M.K Wiedmann,C.A. Paulson, S.E. Babcock, T.S. Kuan, L.J. Mawast, j. Kirch, T.W. Kim, 2011 Compound Semiconductor Week  & 23rd International Conference on Indium Phosphide and Related Materials (2011).

“InAsyP1-y metamorphic buffer layers on InP substrates for mid-IR diode lasers,” J. Kirch, T Garrod, S. Kim, J.H. Park, J.C. Shin, L.J. Mawst, T.F. Kuech, Xueyan Song, S.E. Babcock, I Vurgaftman, J.R. Meyer, Tung-Shen Kuan, Journal of Crystal Growth 312 (2010) 1165-9.

“Block Copolymer Templating for Formation of Quantum Dots and Lattice-Mismatched Semiconductor Structures”, S. Jha, C.-C. Liu, J. H. Park, M. K. Wiedmann, T. S. Kuan, S. E. Babcock, L. J. Mawst,  P. F. Nealey, and T. F. Kuech, Mater. Res. Soc. Symp. Proc. 1258 (2010) 1258-Q13-05

Courses

Fall 2015-2016

  • MS&E 351 - Materials Science-Structure and Property Relations in Solids
  • MS&E 990 - Research and Thesis
  • MS&E 900 - Materials Research Seminar
  • MS&E 890 - Pre-Dissertator\'s Research
  • MS&E 803 - Special Topics in Materials Science
  • MS&E 790 - Master\'s Research or Thesis
  • Profile Summary

    The theme of my research is microstructural evolution in thin film electronic materials. We focus our work on interfaces and defect structures in engineered substrates, engineered buffer layers and epitaxial compound semiconductor materials for the substrate-overlayer lattice mismatch is large.  Our research involves detailed characterization of defect microstructures and compositional homogeneity with the goal of understanding the mechanisms by which improved substrates lead to improved film quality. Our research group uses very high spatial resolution techniques for composition and structure determinations with a focus on techniques of high resolution imaging and analystical transmission and scanning transmission electron microscopy and, more recently, atom probe tomography.


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