Luke J. Mawst

Professor

4617 Engineering hall
1415 Engineering Drive
Madison, WI 53706

Ph: (608) 263-1705
Fax: (608) 262-1267
mawst@engr.wisc.edu

Primary Affiliation:
Electrical and Computer Engineering

Additional Affiliations:
Materials Science Program,


Profile Summary

My other interests include the design and development of a variety of novel device structures such as high-power spatially coherent semiconductor lasers, vertical cavity surface emitters, quantum dot lasers, and mid-IR Quantum Cascade Lasers. I have been involved in  diode laser development using an aluminum-free material system, InGaAsP/InGaP/GaAs. The Al-free material system offers many advantages for diode lasers including ease of fabrication for complex index-guided device structures and improved reliability. However, realizing the full potential of this material system requires an understanding of the nature of quantum-well growth for Al-free materials, and the influence on device performance. Diode lasers of this type are very desirable for many applications such as high-speed, high resolution printing, telecommunications, and medical therapy. My research interests focus on material growth and fabrication issues for III/V compound semiconductor devices. Improvements in device performance can be directly linked to advances in material growth and process development. I am particularly interested in the development of semiconductor diode lasers using the metalorganic chemical vapor deposition (MOCVD) growth process.The MOCVD process allows for the controlled growth of ultra-thin semiconductor films with abrupt interfaces, permitting the fabrication of high performance quantum-well lasers and other optoelectronic devices. Understanding the influence of the material properties on device characteristics can lead to significant improvements in performance.

Education

  • PhD 1987 University of Illinois at Urbana-Champaign

Research Interests

  • semiconductor lasers
  • metalorganic chemical vapor deposition (MOCVD) growth of semiconductors
  • III/V compound semiconductor materials and devices

Awards, Honors and Societies

IEEE Fellow (2011)

Publications

  • L. J. Mawst, J. D. Kirch, C.-C. Chang, T. Kim, T. Garrod, D. Botez, S. Ruder, T. F. Kuech, T. Earles, R. Tatavarti, N. Pan, A. Wibowo, InGaAs/AlInAs Strain-Compensated Superlattices Grown on Metamorphic Buffer Layers for Low-Strain, 3.6 micron-Emitting Quantum-Cascade-Laser Active Regions, Journal of Crystal Growth, Volume 370, 1 May 2013, Pages 230-235
  • J. C. Shin, L. J. Mawst, D. Botez, “Crystal growth via metal-organic vapor phase epitaxy of quantum-cascade-laser structures composed of multiple alloy compositions”, Journal of Crystal Growth, v 357, n 1, p 15-19, October 15, 2012
  • L. Xu, D. Patel, C. S. Menoni, J. Y. Yeh, L. J. Mawst, N. Tansu, “Experimental evidence of the impact of nitrogen on carrier capture and escape times in InGaAsN/GaAs Single quantum well”, IEEE Photonics Journal, v 4, n 6, p 2262-2271, 2012
  • A. P. Napartovich, N. N. Elkin, D. V. Vysotsky, S. Mao, J. Kirch, X. Wang, L. J. Mawst, “Two-Dimensional Antiguided Vertical Cavity Surface Emitting Laser Arrays with Reflecting Boundary”, IEEE J. Selected Topics in Quantum Electronics, v 19, n 4, 2013

  • T. F. Kuech, L. J. Mawst, A. S. Brown, “Mixed semiconductor alloys for optical devices”, Annual Review of Chemical and Biomolecular Engineering, v 4, p 187-209, June 2013
  • T. W. Kim, T. J. Garrod, K. Kim, J. J. Lee, S. D. LaLumondiere, Y. Sin, W. T. Lotshaw, S. C. Moss, T. F. Kuech, Rao Tatavarti, and L. J. Mawst, Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy, Applied Physics Letters, v 100, n 12, p 121120 (4 pp.), 19 March 2012
  • K. Forhani, A. Anand, L. J. Mawst, T. F. Kuech,Low temperature growth of GaAs1-yBiy epitaxial layers”, Journal of Crystal Growth, v 380, p 23-27, 2013.

Courses

Fall 2014-2015

  • ECE 235 - Introduction to Solid State Electronics
  • ECE 790 - Master\'s Research or Thesis
  • ECE 699 - Advanced Independent Study
  • ECE 399 - Independent Study
  • ECE 313 - Optoelectronics Lab
  • ECE 999 - Advanced Independent Study
  • ECE 990 - Research or Thesis
  • ECE 890 - Pre-Dissertator\'s Research
  • Profile Summary

    My other interests include the design and development of a variety of novel device structures such as high-power spatially coherent semiconductor lasers, vertical cavity surface emitters, quantum dot lasers, and mid-IR Quantum Cascade Lasers. I have been involved in  diode laser development using an aluminum-free material system, InGaAsP/InGaP/GaAs. The Al-free material system offers many advantages for diode lasers including ease of fabrication for complex index-guided device structures and improved reliability. However, realizing the full potential of this material system requires an understanding of the nature of quantum-well growth for Al-free materials, and the influence on device performance. Diode lasers of this type are very desirable for many applications such as high-speed, high resolution printing, telecommunications, and medical therapy. My research interests focus on material growth and fabrication issues for III/V compound semiconductor devices. Improvements in device performance can be directly linked to advances in material growth and process development. I am particularly interested in the development of semiconductor diode lasers using the metalorganic chemical vapor deposition (MOCVD) growth process.The MOCVD process allows for the controlled growth of ultra-thin semiconductor films with abrupt interfaces, permitting the fabrication of high performance quantum-well lasers and other optoelectronic devices. Understanding the influence of the material properties on device characteristics can lead to significant improvements in performance.


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